PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 1A continuous collector current and 80V collector-emitter breakdown voltage. Operates with a 150MHz transition frequency and offers a minimum hFE of 100. Packaged in a SOT-89 surface-mount plastic package, this RoHS compliant component has a maximum power dissipation of 1W.
Frequency150MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes BCX5316TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
hFE Min
100
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP, NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
150MHz
DC Rated Voltage
-80V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCX5316TA Datasheet
Download the complete datasheet for Diodes BCX5316TA to view detailed technical specifications.
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