
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO) and 1A Maximum Collector Current (IC). Operates with a 150MHz transition frequency and 1W power dissipation. Packaged in SOT-89 for surface mounting, with tin-matte contact plating. Compliant with RoHS and REACH SVHC standards.
Diodes BCX53TA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BCX53TA to view detailed technical specifications.
No datasheet is available for this part.
