NPN silicon bipolar junction transistor in a SOT-89 surface mount package. Features a 60V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a 150MHz gain bandwidth product and a 1W power dissipation. Operates from -65°C to 150°C, with a collector-emitter saturation voltage of 500mV. Lead-free and RoHS compliant.
Frequency150MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCX55TA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BCX55TA Datasheet
Download the complete datasheet for Diodes BCX55TA to view detailed technical specifications.
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