The Diodes BFS17TA is an NPN RF transistor with a collector base voltage of 25V and a collector emitter breakdown voltage of 15V. It has a gain bandwidth product of 1.3GHz and a maximum collector current of 25mA. The transistor is packaged in a TO-236-3 surface mount package and is suitable for operation over a temperature range of -55°C to 150°C.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BFS17TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Emitter Base Voltage (VEBO) | 2.5V |
| Gain Bandwidth Product | 1.3GHz |
| Height | 1mm |
| Length | 3.05mm |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 25mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 1.3GHz |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BFS17TA Datasheet
Download the complete datasheet for Diodes BFS17TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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