N-Channel JFET, designed for small signal applications, features a 60V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 270mA. This silicon transistor offers a low drain-to-source on-resistance (Rds On) of 5 Ohms and a gate-to-source voltage (Vgs) rating of 20V. Packaged in a TO-92 compatible E-LINE package with 3 leads, it supports through-hole mounting. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 625mW.
PackageTO-92-3
Current Rating270mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes BS170PSTZ technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 270mA |
| Current Rating | 270mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Series | BS170P |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BS170PSTZ Datasheet
Download the complete datasheet for Diodes BS170PSTZ to view detailed technical specifications.
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