N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current of 170mA. Offers a low Drain to Source Resistance (Rds On) of 6 Ohms maximum. Packaged in a compact SOT-23-3 surface mount case, this component operates across a temperature range of -55°C to 150°C. Ideal for electronic circuits requiring efficient switching and amplification.
PackageSOT-23-3
Voltage100V
Current Rating170mA
MountingSurface Mount
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Technical Specifications
Diodes BSS123ATA technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 25pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Voltage | 100V |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BSS123ATA Datasheet
Download the complete datasheet for Diodes BSS123ATA to view detailed technical specifications.
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