N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 100V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 170mA. Offers a low Drain-source On Resistance (Rds On) of 6 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 360mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS123TA technical specifications.
General
| Package/Case | SOT-23 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 20pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BSS123TA Datasheet
Download the complete datasheet for Diodes BSS123TA to view detailed technical specifications.
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