N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 100V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 170mA. Offers a low Drain-source On Resistance (Rds On) of 6 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 360mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23
Current Rating170mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS123TA technical specifications.
General
Package/Case
SOT-23
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
6R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
20pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Nominal Vgs
2.2V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.2V
Turn-Off Delay Time
13ns
Turn-On Delay Time
8ns
DC Rated Voltage
100V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes BSS123TA Datasheet
Download the complete datasheet for Diodes BSS123TA to view detailed technical specifications.
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