
N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a SOT-323 plastic package. Features a continuous drain current of 170mA and a drain-to-source voltage rating of 100V. Offers a low on-resistance of 6 Ohms and a maximum power dissipation of 200mW. Operates across a temperature range of -55°C to 150°C, with switching times including an 8ns turn-on delay and 13ns turn-off delay.
Diodes BSS123W-7 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 170mA |
| Current Rating | 170mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 60pF |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 6R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 100V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BSS123W-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
