N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 plastic package. Features a continuous drain current of 200mA and a drain-to-source voltage of 50V. Offers a maximum power dissipation of 300mW, with a drain-to-source resistance of 1.4 Ohms and an Rds On Max of 3.5 Ohms. Operates within a temperature range of -55°C to 150°C, with turn-on and turn-off delay times of 20ns.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Diodes BSS138-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 50V |
| Weight | 0.050717oz |
| Width | 1.3mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BSS138-7 Datasheet
Download the complete datasheet for Diodes BSS138-7 to view detailed technical specifications.
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