
N-channel silicon MOSFET, SOT-23 package, featuring 50V drain-source breakdown voltage and 200mA continuous drain current. Offers 3.5 Ohm drain-to-source resistance and 50pF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 300mW. Includes 10ns turn-on and fall times, and 15ns turn-off delay. Surface mountable, lead-free, and RoHS compliant.
Diodes BSS138TC technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BSS138TC to view detailed technical specifications.
No datasheet is available for this part.
