N-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for small signal applications. Features a 50V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 200mA. Offers a low drain-to-source resistance (Rds On) of 3.5 Ohms maximum. Packaged in a compact SOT-323 surface-mount plastic package, this single-element transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. Includes a gate-to-source voltage (Vgs) of 20V and an input capacitance of 50pF.
PackageSOT-323
Current Rating200mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BSS138W-7 technical specifications.
General
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 50V |
| Weight | 0.000219oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BSS138W-7 Datasheet
Download the complete datasheet for Diodes BSS138W-7 to view detailed technical specifications.
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