The BSS64TA is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It has a maximum power dissipation of 300mW and is packaged in a TO-236-3 surface mount package. The transistor operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 100MHz. It is not RoHS compliant.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BSS64TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | BSS64 |
| Transition Frequency | 250MHz |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BSS64TA Datasheet
Download the complete datasheet for Diodes BSS64TA to view detailed technical specifications.
No datasheet is available for this part.