BSS84W-7

P-channel JFET, surface mount, features 50V drain-source voltage and 130mA continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 200mW and a low drain-to-source resistance of 6 Ohms. Operating across a wide temperature range from -55°C to 150°C, it comes in a compact SOT-323 plastic package with a 1.35mm width, 2.2mm length, and 1mm height. Key electrical characteristics include a gate-to-source voltage of 20V and an input capacitance of 45pF.