The BST51TA is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 150V and a collector-base voltage of 80V. It has a maximum collector current of 500mA and a maximum power dissipation of 1W. The transistor is packaged in a TO-236-3 surface mount package and has a transition frequency of 300MHz. It operates over a temperature range of -65°C to 150°C, but is not RoHS compliant due to containing lead.
PackageTO-236-3
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BST51TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 1.3V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BST51TA Datasheet
Download the complete datasheet for Diodes BST51TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.