NPN bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage, 500mA continuous collector current, and a minimum hFE of 2000. Housed in a SOT-89 package with 3 pins, this silicon transistor operates from -65°C to 150°C and offers a maximum power dissipation of 1W. RoHS compliant and lead-free.
PackageSOT-89
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BST52TA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 90V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.3V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.5mm |
| hFE Min | 2000 |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| DC Rated Voltage | 80V |
| Weight | 0.001834oz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BST52TA Datasheet
Download the complete datasheet for Diodes BST52TA to view detailed technical specifications.
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