
PNP Darlington bipolar junction transistor (BJT) for surface mount applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a high DC current gain (hFE) of 1000 and a transition frequency of 60MHz. Packaged in a TO-243AA (SOT-89) case, this component operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1W.
Diodes BST61TA technical specifications.
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1.3V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.6mm |
| hFE Min | 1000 |
| Lead Free | Contains Lead |
| Length | 4.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 60MHz |
| DC Rated Voltage | -60V |
| Weight | 0.004603oz |
| Width | 2.6mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BST61TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
