PNP Silicon Bipolar Junction Transistor (BJT) designed for small signal applications. Features a 60V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 200MHz. Packaged in a surface-mount SOT-223 plastic package, this component operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. RoHS compliant.
Frequency200MHz
PackageSOT-223
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes DCP52-16-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.65mm |
| hFE Min | 25 |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCP52-16-13 Datasheet
Download the complete datasheet for Diodes DCP52-16-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
