DIODES

DCP56-16-13

Datasheet

NPN BJT Transistor, 1A, 80V, 200MHz, SOT-223 SM

Diodes

DCP56-16-13

Name: DCP56-16-13 Diodes
Brand: Diodes
SKU: DCP56-16-13

NPN BJT Transistor, 1A, 80V, 200MHz, SOT-223 SM

NPN silicon bipolar junction transistor for small signal applications. Features 1A continuous collector current and 80V collector-emitter breakdown voltage. Operates with a maximum power dissipation of 1W and a transition frequency of 200MHz. Packaged in a 4-pin SOT-223 surface-mount plastic package, this component offers a minimum hFE of 25 and a collector-emitter saturation voltage of 500mV.

PackageSOT-223

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DCP56-16-13 technical specifications.

General

Package/Case	SOT-223
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	80V
Collector Emitter Saturation Voltage	500mV
Collector-emitter Voltage-Max	500mV
Continuous Collector Current	1A
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	200MHz
Height	1.65mm
hFE Min	25
Length	6.7mm
Max Breakdown Voltage	80V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	200MHz
Weight	0.000282oz
Width	3.7mm