The DCP69-13 is a PNP transistor with a collector-emitter breakdown voltage of 20V and a maximum collector current of 1A. It has a gain bandwidth product of 200MHz and a maximum power dissipation of 1W. The transistor is packaged in a surface mount SOT-223 package and is RoHS compliant. It has an operating temperature range of -55°C to 150°C and is suitable for use in high-frequency applications.
PackageSOT-223
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DCP69-13 technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.6mm |
| Length | 6.5mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000282oz |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCP69-13 Datasheet
Download the complete datasheet for Diodes DCP69-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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