
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity for dual-element functionality. Offers a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This silicon transistor operates within a -55°C to +150°C temperature range and boasts a 250MHz transition frequency. Packaged in a compact SOT-363 plastic package, it supports surface mounting and is RoHS compliant.
Diodes DCX114YU-7-F technical specifications.
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 70mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DCX114YU-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.