The DCX56-13 is a TO-243AA surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 200MHz. The transistor is packaged in a tape and reel format and is RoHS compliant.
PackageTO-243AA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DCX56-13 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1.5mm |
| hFE Min | 63 |
| Length | 4.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCX56-13 Datasheet
Download the complete datasheet for Diodes DCX56-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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