NPN silicon bipolar junction transistor for surface mount applications. Features a maximum collector current of 1A, a collector-emitter breakdown voltage of 20V, and a gain bandwidth product of 330MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a TO-243AA plastic package on tape and reel, this component is RoHS and REACH SVHC compliant.
PackageTO-243AA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes DCX68-13 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 330MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 330MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DCX68-13 Datasheet
Download the complete datasheet for Diodes DCX68-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
