PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Breakdown Voltage (VCEO), 1A Max Collector Current (IC), and 200MHz transition frequency. Housed in a SOT-89 surface mount plastic package, this component offers a 1W power dissipation and operates across a -55°C to +150°C temperature range. Compliant with RoHS and REACH SVHC standards.
Diodes DCX69-13 technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.001834oz |
| Width | 2.48mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DCX69-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
