
PNP bipolar junction transistor (BJT) for surface mount applications in a SOT-23-3 package. Features a collector-emitter breakdown voltage of 50V, a maximum continuous collector current of -100mA, and a transition frequency of 250MHz. Offers a minimum hFE of 24 and a maximum power dissipation of 200mW. Operates across a temperature range of -55°C to 150°C.
Diodes DDTA114WCA-7 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1mm |
| hFE Min | 24 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| Weight | 0.050717oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes DDTA114WCA-7 to view detailed technical specifications.
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