PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Operates with a minimum hFE of 56 and a transition frequency of 250MHz. Housed in a compact SOT-23 plastic package, this silicon transistor is rated for a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C. Supplied on tape and reel for automated assembly.
Diodes DDTA124GCA-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | -100mA |
| Height | 1mm |
| hFE Min | 56 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes DDTA124GCA-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.