
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 300mV and a minimum hFE of 100. Packaged in a 3-lead SOT-23 surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
Diodes DDTC113TCA-7-F technical specifications.
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DDTC113TCA-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
