DDTC113TE-7-F

NPN BJT Transistor, 50V, 100mA, 250MHz, SOT-523

NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. Operates with a maximum power dissipation of 150mW and a transition frequency of 250MHz. Packaged in a compact SOT-523 surface mount plastic package, this component is lead-free and RoHS compliant.

PackageSOT-523

Current Rating100mA

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes DDTC113TE-7-F technical specifications.

General

Package/Case	SOT-523
Collector Emitter Breakdown Voltage	50V
Collector-emitter Voltage-Max	300mV
Continuous Collector Current	100mA
Current Rating	100mA
Height	0.75mm
hFE Min	100
Lead Free	Lead Free
Length	1.6mm
Max Breakdown Voltage	50V
Max Collector Current	100mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	250MHz
DC Rated Voltage	50V
Weight	7.1E-05oz
Width	0.8mm