
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage and 100mA Continuous Collector Current. Operates with a 50V supply voltage and offers a 250MHz transition frequency. Housed in a compact SOT-323 surface mount plastic package, this RoHS compliant component is designed for a wide temperature range from -55°C to 150°C.
Diodes DDTC143EUA-7-F technical specifications.
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 30V |
| Height | 1mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DDTC143EUA-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
