Dual N-Channel and P-Channel MOSFET for surface mount applications. Features 20V drain-source voltage, 6.3A continuous drain current, and low 20mΩ drain-source resistance. Operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Packaged in a compact SOIC (SOP-8) plastic case, this component is RoHS and REACH SVHC compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes DMC2020USD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.5mm |
| Input Capacitance | 1.149nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 94.1ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMC2020USD-13 Datasheet
Download the complete datasheet for Diodes DMC2020USD-13 to view detailed technical specifications.
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