Dual N-Channel and P-Channel MOSFET featuring 30V drain-source voltage and 8.5A continuous drain current. Offers a low 21mΩ Rds On resistance for efficient power switching. Designed for surface mounting in a compact SOIC package, this silicon metal-oxide semiconductor FET operates across a wide temperature range of -55°C to 150°C. Key specifications include 767pF input capacitance and a maximum power dissipation of 2.5W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes DMC3021LSD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 767pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50.1ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMC3021LSD-13 Datasheet
Download the complete datasheet for Diodes DMC3021LSD-13 to view detailed technical specifications.
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