Dual N-channel and P-channel silicon Metal-oxide Semiconductor FET for surface mount applications. Features 60V Drain to Source Voltage (Vdss), 2.4A Continuous Drain Current (ID), and a maximum power dissipation of 1.4W. Offers a low Drain to Source Resistance (Rds On Max) of 85mR. Operates across a wide temperature range from -55°C to 150°C. Packaged in a V-DFN3030-8 plastic package on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.4W
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Technical Specifications
Diodes DMC6070LFDH-7 technical specifications.
General
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 731pF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Series | DMC6070 |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 9.6ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMC6070LFDH-7 Datasheet
Download the complete datasheet for Diodes DMC6070LFDH-7 to view detailed technical specifications.
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