
P-channel MOSFET transistor, dual configuration, designed for small signal applications. Features a 20V maximum drain-source voltage and 1.03A maximum continuous drain current. Housed in a 6-pin SOT-563 surface-mount package with a 0.5mm pin pitch. Offers a low drain-source on-resistance of 750mOhm at 4.5V. Operates within a temperature range of -55°C to 150°C.
Diodes DMG1023UV technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-563 |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.6 |
| Seated Plane Height (mm) | 0.6 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±6V |
| Maximum Continuous Drain Current | 1.03A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 59.76@16VpF |
| Maximum Power Dissipation | 530mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Diodes DMG1023UV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.