P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 2.7A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 130mR. Packaged in a 3-pin SOT-23-3 surface mount plastic package. Operates across a temperature range of -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power800mW
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Technical Specifications
Diodes DMG2301U-7 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.7A
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
20V
Fall Time
22.2ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
608pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
800mW
Radiation Hardening
No
Rds On Max
130mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
46.5ns
Turn-On Delay Time
12.5ns
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG2301U-7 Datasheet
Download the complete datasheet for Diodes DMG2301U-7 to view detailed technical specifications.
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