N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 20V Drain-to-Source Voltage (Vdss) and a maximum continuous drain current of 4.2A. Offers a low Drain-Source On-Resistance (Rds On) of 90mR. Operates with a Gate-to-Source Voltage (Vgs) of 8V and a threshold voltage of 1V. Packaged in a 3-pin SOT-23 plastic surface-mount package, supplied on tape and reel. RoHS compliant with a maximum power dissipation of 800mW.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG2302U-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90MR |
| Fall Time | 6.7ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 594.3pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 28.1ns |
| Turn-On Delay Time | 7.4ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG2302U-7 Datasheet
Download the complete datasheet for Diodes DMG2302U-7 to view detailed technical specifications.
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