P-channel MOSFET for surface mount applications, featuring a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 4.2A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance (Rds On) of 52mΩ at a gate-source voltage (Vgs) of 8V. The component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.4W. Packaged in a compact SOT-23 plastic enclosure, it supports tape and reel packaging for automated assembly.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMG2305UX-13 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 65MR |
| Fall Time | 34.7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 808pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 79.3ns |
| Turn-On Delay Time | 10.8ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG2305UX-13 Datasheet
Download the complete datasheet for Diodes DMG2305UX-13 to view detailed technical specifications.
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