
P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 2.5A Continuous Drain Current (ID). Offers low 90mR Drain to Source Resistance (Rds On Max) and fast switching times with 4.8ns Turn-On Delay and 13.4ns Fall Time. Packaged in a compact SOT-23 surface mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
Diodes DMG2307L-7 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 371.3pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 760mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22.4ns |
| Turn-On Delay Time | 4.8ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMG2307L-7 to view detailed technical specifications.
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