P-channel silicon MOSFET, a single-element field-effect transistor designed for surface mounting. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3A. Offers low on-resistance with Rds On Max at 50mR and Drain to Source Resistance at 85mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.2W. Includes fast switching characteristics with turn-on delay time of 8ns and fall time of 38ns. This component is RoHS and Lead Free compliant.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power1.2W
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Technical Specifications
Diodes DMG3401LSN-7 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.326nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.2W |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.000282oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG3401LSN-7 Datasheet
Download the complete datasheet for Diodes DMG3401LSN-7 to view detailed technical specifications.
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