P-channel silicon MOSFET for surface mount applications. Features a continuous drain current of 4A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 39mR (max) and a threshold voltage of -550mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 900mW. Packaged in a SOT-23 plastic package, this component is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Power900mW
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Technical Specifications
Diodes DMG3415U-7 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
4A
Drain to Source Resistance
42.5mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
42.5mR
Fall Time
393ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
294pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
-550mV
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
900mW
Radiation Hardening
No
Rds On Max
39mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-550mV
Turn-Off Delay Time
795ns
Turn-On Delay Time
71ns
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG3415U-7 Datasheet
Download the complete datasheet for Diodes DMG3415U-7 to view detailed technical specifications.
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