P-channel enhancement mode power MOSFET featuring a 16V drain-source voltage and 2.5A continuous drain current. This single-element transistor is housed in a compact 3-pin DFN package measuring 2mm x 1.5mm x 0.35mm, designed for surface mounting. It offers a low drain-source on-resistance of 39mΩ at 4.5V Vgs and operates across a temperature range of -55°C to 150°C.
PackageDFN
MountingSurface Mount
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Technical Specifications
Diodes DMG3415UFY4-7 technical specifications.
General
| Package Family Name | DFN |
| Package/Case | DFN |
| Package Description | Dual Flat Package No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 0.35 |
| Seated Plane Height (mm) | 0.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 16V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 2.5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 281.9@10VpF |
| Maximum Power Dissipation | 1350mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMG3415UFY4-7 Datasheet
Download the complete datasheet for Diodes DMG3415UFY4-7 to view detailed technical specifications.
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