N-Channel Power MOSFET, 30V Drain-Source Voltage, 10.3A Continuous Drain Current, and 11mΩ Max Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 1.281nF input capacitance and 5.1ns fall time. Designed for surface mounting in a green, plastic SOIC package, it operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Compliant with RoHS and REACH SVHC standards, this component is supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG4406LSS-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.3A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.281nF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22.3ns |
| Turn-On Delay Time | 5.2ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4406LSS-13 Datasheet
Download the complete datasheet for Diodes DMG4406LSS-13 to view detailed technical specifications.
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