P-channel MOSFET with 30V drain-source voltage and 7.3A continuous drain current. Features low 16mΩ drain-source on-resistance and 1.614nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a surface-mount SOIC for efficient integration.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMG4435SSS-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20mR |
| Fall Time | 22.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 1.614nF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 44.9ns |
| Turn-On Delay Time | 8.6ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4435SSS-13 Datasheet
Download the complete datasheet for Diodes DMG4435SSS-13 to view detailed technical specifications.
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