N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (ID) of 10A. Offers a low Drain-to-Source On-Resistance (Rds On) of 21.5mΩ at a specified gate-source voltage. This single-element transistor is housed in a green, plastic SOP-8 package for surface mounting. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.42W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.42W
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Technical Specifications
Diodes DMG4496SSS-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 493.5pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.42W |
| Radiation Hardening | No |
| Rds On Max | 21.5mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19.5ns |
| Turn-On Delay Time | 4.76ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4496SSS-13 Datasheet
Download the complete datasheet for Diodes DMG4496SSS-13 to view detailed technical specifications.
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