N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 11.2A continuous drain current. This surface-mount component is housed in an 8-pin SO package with gull-wing leads, offering a low 14mOhm drain-source resistance at 10V. Key specifications include a maximum power dissipation of 1550mW and a wide operating temperature range from -55°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.45 |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 11.2A |
| Maximum Drain Source Resistance | 14@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|45.7@10VnC |
| Typical Gate Charge @ 10V | 45.7nC |
| Typical Input Capacitance @ Vds | 2296@15VpF |
| Maximum Power Dissipation | 1550mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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