N-Channel Power MOSFET, 30V drain-source voltage, 10A continuous drain current, and 17mΩ maximum drain-source resistance. Features include 5.03ns turn-on delay, 8.55ns fall time, and 26.33ns turn-off delay. This surface-mount component operates within a -55°C to 150°C temperature range and has an input capacitance of 798pF. Packaged in a TO-252-3 plastic case, it is RoHS and REACH SVHC compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG4800LK3-13 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.55ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 798pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.71W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.33ns |
| Turn-On Delay Time | 5.03ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4800LK3-13 Datasheet
Download the complete datasheet for Diodes DMG4800LK3-13 to view detailed technical specifications.
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