Diodes
DMG4800LSDQ-13
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
PackageSO
MountingSurface Mount
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Technical Specifications
Diodes DMG4800LSDQ-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Fall Time | 8.55ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.33ns |
| Turn-On Delay Time | 5.03ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4800LSDQ-13 Datasheet
Download the complete datasheet for Diodes DMG4800LSDQ-13 to view detailed technical specifications.
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