N-Channel Power MOSFET featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount device offers a low 20mΩ drain-to-source resistance. With two N-channel elements in a single SOIC package, it boasts fast switching speeds with turn-on delay of 2.9ns and fall time of 3.1ns. Maximum power dissipation is 1.42W, operating across a temperature range of -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG4822SSD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 478.9pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.42W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.6ns |
| Turn-On Delay Time | 2.9ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4822SSD-13 Datasheet
Download the complete datasheet for Diodes DMG4822SSD-13 to view detailed technical specifications.
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