N-Channel Power MOSFET, 650V Vdss, 4A Continuous Drain Current (ID), and 3 Ohm Rds On Max. Features 1.51ns turn-on delay, 16ns fall time, and 40ns turn-off delay. Through-hole mounting in a TO-220-3 package. Operates from -55°C to 150°C with a maximum power dissipation of 2.19W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG4N65CT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 16ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.5mm |
| Input Capacitance | 900pF |
| Length | 10.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.19W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15.1ns |
| Weight | 0.08113oz |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG4N65CT Datasheet
Download the complete datasheet for Diodes DMG4N65CT to view detailed technical specifications.
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