N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element junction field-effect transistor designed for surface mounting. Features a continuous drain current of 6.5A and a drain-to-source voltage of 24V. Offers a low drain-to-source resistance of 11mR and a maximum power dissipation of 980mW. Operates across a wide temperature range from -55°C to 150°C. Packaged in a DFN5020-6 plastic housing on tape and reel.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG5802LFX-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 24V |
| Fall Time | 22.45ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.8mm |
| Input Capacitance | 1.0664nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 980mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32.18ns |
| Turn-On Delay Time | 3.69ns |
| Width | 2.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG5802LFX-7 Datasheet
Download the complete datasheet for Diodes DMG5802LFX-7 to view detailed technical specifications.
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