DMG6402LDM-7

N-Channel MOSFET, 30V Drain-Source Voltage, 5.3A Continuous Drain Current, and 27mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and is housed in a compact SOT-26 surface-mount plastic package. Key electrical characteristics include 404pF input capacitance, 2.84ns fall time, 13.92ns turn-off delay, and 3.41ns turn-on delay. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 1.12W.