
N-Channel MOSFET, 30V Drain-Source Voltage, 5.3A Continuous Drain Current, and 27mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and is housed in a compact SOT-26 surface-mount plastic package. Key electrical characteristics include 404pF input capacitance, 2.84ns fall time, 13.92ns turn-off delay, and 3.41ns turn-on delay. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 1.12W.
Diodes DMG6402LDM-7 technical specifications.
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.84ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 404pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.12W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.92ns |
| Turn-On Delay Time | 3.41ns |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMG6402LDM-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.