N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 6.5A and a drain-source voltage of 20V. Offers a low drain-source on-resistance of 25mR at a nominal gate-source voltage of 500mV. Packaged in a 3-pin SOT-23 plastic surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.3W.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG6968U-7 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
36mR
Fall Time
205ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
151pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Nominal Vgs
500mV
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
500mV
Turn-Off Delay Time
613ns
Turn-On Delay Time
54ns
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMG6968U-7 Datasheet
Download the complete datasheet for Diodes DMG6968U-7 to view detailed technical specifications.
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