
N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 6.5A and a drain-source voltage of 20V. Offers a low drain-source on-resistance of 25mR at a nominal gate-source voltage of 500mV. Packaged in a 3-pin SOT-23 plastic surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.3W.
Diodes DMG6968U-7 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 36mR |
| Fall Time | 205ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 151pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | 500mV |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 500mV |
| Turn-Off Delay Time | 613ns |
| Turn-On Delay Time | 54ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMG6968U-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
